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Theory of Defects in Solids: Electronic Structure of Defects in Insulators and Semiconductors

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Theory of Defects in Solids: Electronic Structure of Defects in Insulators and Semiconductors

Theory of Defects in Solids Electronic Structure of Defects in Insulators and Semiconductors.jpg

Theory of Defects in Solids: Electronic Structure of Defects in Insulators and Semiconductors

A. M. Stoneham

ABSTRACT

This book discusses the theory of defects in semiconductors and insulators. It focuses on the electronic structure of point defects in insulators and semiconductors, with discussions of underlying assumptions, methods, and how to calculate what is observed experimentally. The most important types of defects and impurities are analysed, with full comparisons of theory and experiment. For many topics, it is the only comprehensive and critical discussion of approaches and the use of theory alongside experiment.

Keywords: semiconductorsinsulatorselectronic structureimpuritiestheory and experiment

BIBLIOGRAPHIC INFORMATION

Print publication date: 2001Print ISBN-13: 9780198507802
Published to Oxford Scholarship Online: September 2007DOI:10.1093/acprof:oso/9780198507802.001.0001

Front Matter

I THE PERFECT SOLID

1 CRYSTALS AND LATTICE GEOMETRY

2 ELECTRONIC STRUCTURE OF THE PERFECT LATTICE

3 LATTICE DYNAMICS

II ELECTRONIC STRUCTURE OF ISOLATED DEFECTS

4 EFFECTIVE-MASS THEORY

5 GREEN'S FUNCTION METHODS

6 VARIATIONAL METHODS

7 MOLECULAR METHODS AND MODEL CALCULATIONS

8 LATTICE DISTORTION FOR DEFECT SYSTEMS

9 GENERAL RESULTS

III CALCULATION OF OBSERVABLE PROPERTIES OF DEFECTS

10 OPTICAL PROPERTIES

11 DYNAMICS OF IMPERFECT LATTICES

12 EXTERNAL FIELDS AND THEIR EFFECTS

13 ELECTRON SPIN RESONANCE

14 NON-RADIATIVE PROCESSES AND THE INTERACTION OF FREE CARRIERS WITH DEFECTS

IV COMPARISON OF THEORY AND EXPERIMENT

15 THE F-CENTRE AND RELATED ONE-CARRIER CENTRES

16 CENTRES WITH TWO CARRIERS

17 THE R-CENTRE

18 SELF-TRAPPED HOLES: THE Vk-CENTRE

19 THE H-CENTRE AND OTHER INTRINSIC INTERSTITIALS

20 HYDROGEN IN IONIC CRYSTALS: U-, U1-, AND U2-CENTRES

21 THE REORIENTATION OF DEFECTS IN SOLIDS

22 TRANSITION-METAL IONS

23 SHALLOW DONORS AND ACCEPTORS IN SEMICONDUCTORS

24 ISOELECTRONIC IMPURITIES

25 DIPOLAR SYSTEMS AND DONOR–ACCEPTOR PAIRS

26 BOUND EXCITONS

27 VACANCIES IN VALENCE CRYSTALS

End Matter


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